发明名称 Light Emitting Device
摘要 An objective is to increase the reliability of a light emitting device structured by combining TFTs and organic light emitting elements. A TFT ( 1201 ) and an organic light emitting element ( 1202 ) are formed on the same substrate ( 1203 ) as structuring elements of a light emitting device ( 1200 ). A first insulating film ( 1205 ) which functions as a blocking layer is formed on the substrate ( 1203 ) side of the TFT ( 1201 ), and a second insulating film ( 1206 ) is formed on the opposite upper layer side as a protective film. In addition, a third insulating film ( 1207 ) which functions as a barrier film is formed on the lower layer side of the organic light emitting element ( 1202 ). The third insulating film ( 1207 ) is formed by an inorganic insulating film such as a silicon nitride film, a silicon oxynitride film, an aluminum nitride film, an aluminum oxide film, or an aluminum oxynitride film. A fourth insulating film ( 1208 ) and a partitioning layer ( 1209 ) formed on the upper layer side of the organic light emitting element ( 1202 ) are formed using similar inorganic insulating films.
申请公布号 US2008213929(A1) 申请公布日期 2008.09.04
申请号 US20070953356 申请日期 2007.12.10
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;TAKAYAMA TORU
分类号 H01L33/00;H05B33/22;H01L27/32;H01L51/52 主分类号 H01L33/00
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