| 摘要 |
A CMOS image sensor capable of preventing leakage current of a transfer transistor and a method of manufacturing thereof are disclosed. Embodiments relate to a complementary metal-oxide-silicon (CMOS) image sensor including a transfer transistor. The transfer transistor includes an epi-layer formed over a semiconductor substrate defined by a photodiode area, an active area, and a device isolation area. A device isolation film may be formed in the device isolation area. A gate electrode may be formed over the epi-layer for the transfer transistor with a gate insulating film interposed therebetween. A first dopant diffusion area may be formed by implanting first dopant ions into the epi-layer of the photodiode area. A potential well area may be formed in the first dopant diffusion area adjacent to the gate electrode. A second dopant diffusion area may be formed by implanting second dopant ions into the epi-layer of a side-surface floating diffusion area of a gate spacer.
|
