MICROELECTRONIC ASSEMBLY WITH IMPROVED ISOLATION VOLTAGE PERFORMANCE AND A METHOD FOR FORMING THE SAME

摘要

A method for forming a microelectronic assembly and a microelectronic assembly are provided. First and second semiconductor devices (72) are formed over a substrate (20) having a first dopant type at a first concentration. First and second buried regions (28) having a second dopant type are formed respectively below the first and second semiconductor devices with a gap (34) therebetween. At least one well region (64, 70) is formed over the substrate and between the first and second semiconductor devices. A barrier region (48) having the first dopant type at a second concentration is formed between and adjacent to the first and second buried regions such that at least a portion of the barrier region extends a depth (82) from the first and second semiconductor devices that is greater or equal to the depth of the buried regions.