PHOSPHORUS-STABILIZED TRANSITION METAL OXIDE DIFFUSION BARRIER
摘要
<p>Method for controlling glass formation on a semiconductor substrate. By using a doped diffusion barrier material, such as a transition metal oxide paste, the subsequent diffusion of glass forming elements into the substrate may be stabilized and controlled.</p>
申请公布号
WO2008070632(B1)
申请公布日期
2008.09.04
申请号
WO2007US86305
申请日期
2007.12.03
申请人
ADVENT SOLAR, INC.;HACKE, PETER;GONZALES, VICTORIA;DOMINGUEZ, JASON
