发明名称 INTERLAYER INSULATION FILM, INTERCONNECT STRUCTURE, AND METHODS FOR PRODUCTION THEREOF
摘要 <p>An interlayer insulation film can be produced by laminating a hydrocarbon layer containing an Si atom and a fluorocarbon layer containing an N atom on each other, wherein the hydrocarbon layer contains an H atom and a C atom at such a ratio that the ratio of the number of C atoms to the number of H atoms (H/C) becomes 0.8 to 1.2. The interlayer insulation film is reduced in the generation of a leak current and the film shrinkage which may be caused by thermal annealing, has a low dielectric constant, and is stable.</p>
申请公布号 WO2008105344(A1) 申请公布日期 2008.09.04
申请号 WO2008JP53083 申请日期 2008.02.22
申请人 NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY;TOKYO ELECTRON LIMITED;ZEON CORPORATION;OHMI, TADAHIRO;YASUDA, SEIJI;INOKUCHI, ATSUTOSHI;MATSUOKA, TAKAAKI;KAWAMURA, KOHEI;NAKAMURA, MASAHIRO 发明人 OHMI, TADAHIRO;YASUDA, SEIJI;INOKUCHI, ATSUTOSHI;MATSUOKA, TAKAAKI;KAWAMURA, KOHEI;NAKAMURA, MASAHIRO
分类号 H01L21/314;H01L21/768;H01L23/522 主分类号 H01L21/314
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