发明名称 |
DOPED NANOPARTICLE-BASED SEMICONDUCTOR JUNCTION |
摘要 |
<p>A doped semiconductor junction for use in an electronic device and a method for making such junction is disclosed. The junction includes a first polycrystalline semiconductor layer doped with donors or acceptors over a substrate such that the first doped semiconductor layer has a first polarity, the first layer including fused semiconductor nanoparticles; and a second layer in contact with the first semiconductor layer over a substrate to form the semiconductor junction.</p> |
申请公布号 |
WO2008105863(A1) |
申请公布日期 |
2008.09.04 |
申请号 |
WO2007US25208 |
申请日期 |
2007.12.10 |
申请人 |
EASTMAN KODAK COMPANY;KAHEN, KEITH BRIAN |
发明人 |
KAHEN, KEITH BRIAN |
分类号 |
H01L29/861;H01L21/225;H01L29/06;H01L29/868 |
主分类号 |
H01L29/861 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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