| 摘要 |
An electroless plating method for forming a conductor substance on a workpiece used as a dielectric is provided to consider RF(Radio Frequency) characteristics of the antenna and uniformly forming a plating layer on a surface of the antenna when plating an antenna for a cellular phone. An electroless plating method for forming a conductor substance on a workpiece used as a dielectric comprises a pre-treatment process, an electroless plating process, a post-treatment process, and a cleaning and drying process, wherein: the pre-treatment process comprises a supersonic degreasing step, an activating step, a first catalyst activating step, and a second catalyst activating step; the supersonic degreasing step is performed by washing the plating object after immersing a plating object obtained by performing an LDS(Laser Direct Structuring) process on a PBT/PET(Polybutylene terephthalate/Polyethylene terephthalate) workpiece into a treatment solution with a temperature of 40 to 50 deg.C as an aqueous supersonic cleanser solution with a concentration of 5 to 30% by weight for 30 seconds to 2 minutes; the activating step is performed by washing the plating object after immersing the plating object into a treatment solution which is prepared by mixing 35 to 40 weight parts of a catalytic reaction promoter with 60 to 65 weight parts of deionized water, and which has a pH of 1 or less and a temperature of 20 to 30 deg.C for 10 to 15 minutes; the first catalyst activating step is performed by washing the plating object after immersing the plating object into a treatment solution with a temperature of 20 to 30 deg.C prepared by mixing 20 to 30 ml/L of a catalyst imparting agent for electroless plating and 5 to 15 ml/L of 37% hydrochloric acidwith 960 to 970 ml/L of deionized water for 1 to 10 minutes; and the second catalyst activating step is performed by washing the plating object after immersing the plating object into a treatment solution with a temperature of 20 to 40 deg.C prepared by mixing 50 to 150 ml/L of a chemical copper reaction promoter with 850 to 950 ml/L of deionized water for 2 to 10 minutes.
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