| 摘要 |
PROBLEM TO BE SOLVED: To provide a monolithically integrated light receiving and emitting device that can be easily fabricated. SOLUTION: A first semiconductor multilayer film reflecting mirror 102, first resonators (103, 104, 105), a second semiconductor multilayer reflecting mirror 106, second resonators (107, 108, 109), and a third semiconductor multilayer reflecting mirror 110, are provided on a substrate 101. The first resonators are provided with an active layer 104 where a surface-emitter is formed, while other resonators are provided with a light absorbing layer 108 where a surface-receiver is formed. Electrodes 113, 112, 111 are provided that are each capable of independently applying voltage to the active layer 104 and the light absorbing layer 108, with the first and second resonators having cavity length different from each other. COPYRIGHT: (C)2006,JPO&NCIPI
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