发明名称 |
Heterojunction bipolar transistor and method for fabricating the same |
摘要 |
<p>A heterojunction bipolar transistor is fabricated by stacking a Si collector layer, a SiGeC base layer and a Si emitter layer in this order. By making the amount of a lattice strain in the SiGeC base layer on the Si collector layer 1.0% or less, the band gap can be narrower than the band gap of the conventional practical SiGe (the Ge content is about 10%), and good crystalline can be maintained after a heat treatment. As a result, a narrow band gap base with no practical inconvenience can be realized.</p> |
申请公布号 |
EP1965431(A2) |
申请公布日期 |
2008.09.03 |
申请号 |
EP20080011439 |
申请日期 |
2000.06.21 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
TAKAGI, TAKESHI;YUKI, KOICHIRO;TOYODA, KENJI;KANZAWA, YOSHIHIKO |
分类号 |
H01L29/737;H01L21/331;H01L29/161;H01L29/165 |
主分类号 |
H01L29/737 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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