LUMINESCENCE DIODE CHIP WITH CURRENT SPREADING LAYER AND METHOD FOR PRODUCING THE SAME

摘要

#CMT# #/CMT# A luminescence diode chip has a semiconductor layer sequence suitable for generation of electromagnetic radiation, and at least one current barrier which is formed of semiconductor material of the epitaxial semiconductor layer sequence and of material of the current expansion layer and/or by a boundary surface between the semiconductor layer sequence and the current expansion layer. #CMT# : #/CMT# An independent claim is included for a method for fabricating a luminescence diode chip. #CMT#USE : #/CMT# As luminescence diode chip with epitaxial semiconductor layer sequence for generation of electromagnetic radiation. #CMT#ADVANTAGE : #/CMT# Has increased efficacy relative to conventional luminescence diode chips for generation of, and tapping of, electromagnetic radiation. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# A schematic sectional view of a luminescence diode chip is shown. 1 : Semiconductor layer sequence 2 : Connection body 3 : Current expanding layer 4 : Current barrier 16 : Semiconductor layer.