发明名称 SEMICONDUCTOR MEMORY DEVICE, AND DATA WRITE AND READ METHOD OF THE SAME
摘要 A semiconductor memory device and a data read/write method thereof are provided to prevent a data read error by reading data without using a reference memory cell array block. A semiconductor memory device includes memory cell array blocks(BLk1~BLki) and a bit line selector unit. The memory cell array blocks include sub memory cell array blocks, each comprising first and second memory cells. The first memory cells include floating bodies, which are connected between word and bit lines. The second memory cell includes a floating body, which is connected to between word and inverted bit lines. The bit line selector unit includes bit line selectors(20-11~20-1m), which couple one of the bit lines of the respective sub memory cell array blocks and one of the inverted bit lines with a corresponding sense bit line pair, in response to each of bit line select signals.
申请公布号 KR100663368(B1) 申请公布日期 2006.12.22
申请号 KR20050118907 申请日期 2005.12.07
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, YEONG TAEK
分类号 G11C16/04 主分类号 G11C16/04
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