SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

A semiconductor light emitting device is provided to improve an inter quantum efficiency by reducing a lattice mismatch state between a well layer and a barrier layer using an improved active layer structure. A semiconductor light emitting device has a plurality of semiconductor layers. The semiconductor light emitting device includes an active layer(40) capable of generating light by using the recombination between electrons and holes. The active layer is formed like a quantum well structure. The quantum well structure includes a well layer(41) made of AlxGayIn1-x-y(0 x 1, 0 y 1, 0 x+y 1) and a barrier layer(42) made of MgaZn1-a(0 a 1).