发明名称 REFLECTION-TYPE MASK BLANK FOR EUV LITHOGRAPHY, AND SUBSTRATE WITH ELECTRICALLY CONDUCTIVE FILM FOR THE MASK BLANK
摘要 This invention provides a substrate with an electrically conductive film for an EUV mask blank having enhanced surface hardness, and a substrate with a multilayer reflection film and an EUV mask blank using the substrate with an electrically conductive film. The substrate with an electrically conductive film is adapted for use in the production of a reflection-type mask blank for EUV lithography and is characterized in that the electrically conductive film is formed of at least one material selected from the group consisting of Cr, Ti, Zr, Nb, Ni and V and contains B (boron) in an average concentration of 1 to 70 at%.
申请公布号 KR20080080276(A) 申请公布日期 2008.09.03
申请号 KR20087007826 申请日期 2006.11.13
申请人 ASAHI GLASS COMPANY LTD. 发明人 HAYASHI KAZUYUKI;SUGIYAMA TAKASHI;MIKAMI MASAKI
分类号 G03F1/24;H01L21/027 主分类号 G03F1/24
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