| 摘要 |
<p>A method for manufacturing a semiconductor device with a recess gate is provided to secure characteristics and reliability of the semiconductor device by forming symmetrically source/drain regions regardless of the misalignment of a gate pattern. A recess(25) is formed by etching selectively a semiconductor substrate(21). Source/drain regions(27) are formed on the resultant structure by implanting dopants into the substrate. A gate pattern is formed on the resultant structure. At this time, the recess is completely filled with the gate pattern and an upper portion of the gate pattern is protruded from the substrate. The recess is formed on the substrate by using a pad pattern composed of a pad oxide layer and a nitride layer as an etch mask. The nitride layer is removed from the resultant structure after the recess forming process. The nitride layer is removed by a wet etching process.</p> |
