POLISHING COMPOSITION AND POLISHING METHOD FOR FORMING COPPER WIRING FOR SEMICONDUCTOR INTEGRATED CIRCUIT

摘要

The present invention provides a technique for realizing highly flat surface of a semiconductor integrated circuit employing copper as a wiring metal. The present invention provides a polishing composition containing a neutralized carboxylic acid, an oxidizer and water, wherein a part of the carboxylic acid is an alicyclic resin acid (A) and the pH value is within a range of from 7.5 to 12. The alicyclic resin acid is preferably at least one type selected from the group consisting of abietic acid, an isomer of abietic acid, pimaric acid, an isomer of pimaric acid and derivatives of these, or a rosin. Further, the present invention provides a polishing method of semiconductor integrated circuit surface in which a copper film formed on a surface having a groove for wiring, by using the polishing composition, and the present invention provides a copper wiring for semiconductor integrated circuit formed by this polishing method.