Nano-scale transistor device with large current handling capability

摘要

A novel nano-scale bulk or ultra thin SOI transistor having large Ion current, small output resistance and methods to fabricate the same are disclosed. The SOI device preferably includes a substrate with buried oxide layer deposited thereon and an ultra thin active layer deposited on the buried oxide layer. The transistor has an active region defined by isolation regions, the active region having a source and a drain with a body disposed there between. An oxide insulating layer is disposed over the active region between the source and the drain. On top of this oxide layer are deposited two gates adjacent to each other with a small gap separating them. The side of one gate reaches the source and the side of the other reaches the drain. The source and the drain are each composed of two oppositely doped regions.