发明名称 Methods of fabricating integrated circuit devices having fuse structures including buffer layers
摘要 An integrated circuit device is provided including an integrated circuit substrate having a fuse region. A window layer is provided on the integrated circuit substrate that defines a fuse region. The window layer is positioned at an upper portion of the integrated circuit device and recessed beneath a surface of the integrated circuit device. A buffer pattern is provided between the integrated circuit substrate and the window layer and a fuse pattern is provided between the buffer pattern and the window layer. Methods of forming integrated circuit devices are also described.
申请公布号 US7419856(B2) 申请公布日期 2008.09.02
申请号 US20070699782 申请日期 2007.01.30
申请人 发明人
分类号 H01L21/82;H01L23/52;H01L21/3205;H01L21/8242;H01L23/525;H01L27/108 主分类号 H01L21/82
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