发明名称 |
Methods of fabricating integrated circuit devices having fuse structures including buffer layers |
摘要 |
An integrated circuit device is provided including an integrated circuit substrate having a fuse region. A window layer is provided on the integrated circuit substrate that defines a fuse region. The window layer is positioned at an upper portion of the integrated circuit device and recessed beneath a surface of the integrated circuit device. A buffer pattern is provided between the integrated circuit substrate and the window layer and a fuse pattern is provided between the buffer pattern and the window layer. Methods of forming integrated circuit devices are also described.
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申请公布号 |
US7419856(B2) |
申请公布日期 |
2008.09.02 |
申请号 |
US20070699782 |
申请日期 |
2007.01.30 |
申请人 |
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发明人 |
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分类号 |
H01L21/82;H01L23/52;H01L21/3205;H01L21/8242;H01L23/525;H01L27/108 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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