发明名称 Near-field exposure photoresist and fine pattern forming method using the same
摘要 A near-field photoresist for formation of a fine pattern with by near-field exposure includes an alkali-soluble novalac resin, a diazyde-type photosensitizer which is photoreactive by near-field exposure, a photoacid generator which generates acid by the near-field exposure, and a solvent.
申请公布号 US7419763(B2) 申请公布日期 2008.09.02
申请号 US20070703108 申请日期 2007.02.07
申请人 发明人
分类号 G03F7/30;G03F7/023 主分类号 G03F7/30
代理机构 代理人
主权项
地址