OPERATING METHOD OF CHARGE TRAP FLASH MEMORY DEVICE

摘要

An operation method of a charge trap flash memory device is provided to prevent opposite charges from being left in a charge trap layer in a program state or an erase state, by improving recombination speed of electrons and holes and stabilizing charges. According to an operation method of performing program or erase operation in a charge trap flash memory device having a charge trap layer, the program or erase operation is performed by applying a composite pulse of a DC pulse and a perturbation pulse to the charge trap flash memory device. The perturbation pulse is an AC perturbation pulse. The composite pulse has the AC perturbation pulse following the DC pulse. According to the composite pulse, the DC pulse has an equal polarity to the AC perturbation pulse, and the AC perturbation pulse has a DC level overlapped with the DC pulse.