发明名称 Semiconductor device
摘要 To improve the reliability of the phase change element, unwanted current should not be flown into the element. Therefore, an object of the present invention is to provide a memory cell that stores information depending on a change in its state caused by applied heat, as well as an input/output circuit, and to turn off the word line until the power supply circuit is activated. According to the present invention, unwanted current flow to the element can be prevented and thereby data destruction can be prevented.
申请公布号 US7420838(B2) 申请公布日期 2008.09.02
申请号 US20070844333 申请日期 2007.08.23
申请人 RENESAS TECHNOLOGY CORP. 发明人 OSADA KENICHI;KAWAHARA TAKAYUKI
分类号 G11C11/00 主分类号 G11C11/00
代理机构 代理人
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