| 摘要 |
The present invention provides a method for manufacturing a floating gate type semiconductor device on a substrate having a surface ( 2 ), and a device thus manufactured. The method comprises:-forming, on the substrate surface, a stack comprising an insulating film ( 4 ), a first layer of floating gate material ( 6 ) and a layer of sacrificial material ( 8 ),-forming at least one isolation zone ( 18 ) through the stack and into the substrate ( 2 ), the first layer of floating gate material ( 6 ) thereby having a top surface and side walls ( 26 ),-removing the sacrificial material ( 8 ), thus leaving a cavity ( 20 ) defined by the isolation zones ( 18 ) and the top surface of the first layer of floating gate material ( 6 ), and filling the cavity ( 20 ) with a second layer of floating gate material ( 22 ), the first layer of floating gate material ( 6 ) and the second layer of floating gate material ( 22 ) thus forming together a floating-gate ( 24 ).
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