Nitride based LED with a p-type injection region

摘要

An LED chip ( 2 ) is composed of a p-GaN layer ( 10 ), an n-GaN layer ( 14 ), and an MQW emission layer ( 12 ) that is sandwiched between the GaN layers ( 10 and 14 ). Each layer is made of a GaN semiconductor. Light exits the LED chip ( 2 ) through the n-GaN layer ( 14 ). A p-electrode ( 16 ) of the LED chip ( 2 ) has a surface profile ( 24 B) defined by a plurality of columnar projections ( 24 A) formed in a uniformly distributed relation on the surface facing toward the p-GaN layer ( 10 ). The p-electrode ( 16 ) is in contact with the p-GaN layer ( 10 ) at the top surface of each projection ( 24 A).