| 摘要 |
A semiconductor memory device and a method for operating the same are provided to generate a delay locked clock by correcting duty ratio of an inputted clock signal efficiently. A delay locked loop generates a delay locked clock through delay locking operation. A duty correction circuit(100) corrects duty ratio of the delay locked clock by using the delay locked clock and a clock divided from the delay locked clock. The duty correction circuit corrects duty ratio by comparing a rising slope of a first reference voltage obtained by accumulating a voltage corresponding to a first logic level period of the delay locked clock with a rising slope of a second reference voltage obtained by accumulating a voltage corresponding to a second logic level period of the clock divided from the delay locked clock.
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