发明名称 Holographically defined surface mask etching method and etched optical structures
摘要 The invention is directed to a method for etching a solid state material to create a surface relief pattern. A resist layer is formed on the surface of the solid state material. The photoresist layer is holographically patterned to form a patterned mask. The pattern is then transferred into the solid state material by a dry etching process. The invention is especially useful for forming optical nanostructures. In preferred embodiments, a direct write process, such as ebeam lithography, is used to define defects and functional elements, such as waveguides and cavities.
申请公布号 US7421158(B2) 申请公布日期 2008.09.02
申请号 US20050521425 申请日期 2005.03.22
申请人 THE REGENTS OF THE UNIVERSITY OF CALIFORNIA 发明人 FAINMAN YESHAIAHU;NAKAGAWA WATARU;CHEN CHYONG-HUA;SUN PANG-CHEN;PANG LIN
分类号 G02B6/26;G02B;G02B6/12;G02B6/255;G02B27/42;G02F1/295;G03F7/00;G03F7/20;G03F7/40;H01L21/00 主分类号 G02B6/26
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