发明名称 |
Vertical type semiconductor device and method for manufacturing the same |
摘要 |
A vertical type semiconductor device includes: a silicon substrate having a first surface and a second surface; a first electrode disposed on the first surface of the silicon substrate; and a second electrode disposed on the second surface of the silicon substrate. Current is capable of flowing between the first electrode and the second electrode in a vertical direction of the silicon substrate. The second surface of the silicon substrate includes a re-crystallized silicon layer. The second electrode includes an aluminum film so that the aluminum film contacts the re-crystallized silicon layer with ohmic contact.
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申请公布号 |
US7420246(B2) |
申请公布日期 |
2008.09.02 |
申请号 |
US20060442206 |
申请日期 |
2006.05.30 |
申请人 |
DENSO CORPORATION |
发明人 |
OZOE SHOJI;SHIGA TOMOFUSA;OKABE YOSHIFUMI;AOKI TAKAAKI;FUKAZAWA TAKESHI;KAYUKAWA KIMIHARU |
分类号 |
H01L29/26 |
主分类号 |
H01L29/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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