发明名称 A MULTI-LAYER SEMICONDUCTOR DEVICE HAVING LASER DEVICES, AND A MANUFACTURING METHOD FOR IT
摘要 A multi-layer semiconductor device having laser devices and a manufacturing method thereof are provided to implement semiconductor discrete device and the laser devices on a single chip by transmitting electrical signals of the semiconductor discrete devices to the laser devices through wiring inside the chip. A multi-layer semiconductor device having laser devices includes lower discrete devices, a lower insulating layer(9), a laser waveguide(17), semiconductor electrodes(15), and a light emitting diode(21'). The lower discrete devices are arranged on a semiconductor substrate(1). The lower insulating layer covers the semiconductor substrate having the lower discrete devices. The laser waveguide is arranged on the lower insulating layer. The semiconductor electrodes are arranged at both sides of the laser waveguide. The light emitting diode is arranged on the laser waveguide and the semiconductor electrodes, and one end thereof is electrically connected to the lower discrete devices.
申请公布号 KR20080079869(A) 申请公布日期 2008.09.02
申请号 KR20070020431 申请日期 2007.02.28
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JANG, JAE HOON;JUNG, SOON MOON;JEONG, JAE HUN
分类号 H01L33/00 主分类号 H01L33/00
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