发明名称 |
Nonvolatile semiconductor memory device having a gate stack and method of manufacturing the same |
摘要 |
A nonvolatile semiconductor memory device includes a semiconductor substrate having a source region and a drain region, and a gate stack formed on the semiconductor substrate between and in contact with the source and drain regions. The gate stack includes, in sequential order from the substrate: a tunneling film; a first trapping material film doped with a first predetermined impurity, the first trapping material film having a higher dielectric constant than the nitride film (Si<SUB>3</SUB>N<SUB>4</SUB>); a first insulating film having a higher dielectric constant than a nitride film; and a gate electrode. Such a nonvolatile semiconductor memory device can effectively control the trap density according to the doping concentration, thereby increasing the write/erase speed of data at a low operating voltage.
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申请公布号 |
US7420256(B2) |
申请公布日期 |
2008.09.02 |
申请号 |
US20040835097 |
申请日期 |
2004.04.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHAE SOO-DOO;KIM CHUNG-WOO;LEE JUNG-HYUN;KIM MOON-KYUNG;HWANG HYUN-SANG |
分类号 |
H01L21/8247;H01L29/76;H01L21/28;H01L21/336;H01L21/8246;H01L27/115;H01L29/51;H01L29/788;H01L29/792;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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