发明名称 |
APPARATUS AND METHOD OF FORMING METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH ATOMIC LAYER DEPOSITED GATE DIELECTRIC |
摘要 |
A method for forming a metal oxide semiconductor field-effect transistor (MOSFET) includes forming a III-V compound semiconductor on a substrate with the III-V compound semiconductor being doped with a first dopant type. The method further includes doping a first and second region of the III-V compound semiconductor with a second dopant type to form a drain and a source of the MOSFET. The method further includes forming a gate dielectric on the III-V compound semiconductor through atomic layer deposition. The method further includes applying a metal onto the dielectric to form a gate of the MOSFET. A MOSFET is also disclosed herein.
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申请公布号 |
US2008048216(A1) |
申请公布日期 |
2008.02.28 |
申请号 |
US20070753993 |
申请日期 |
2007.05.25 |
申请人 |
YE PEIDE D;XUAN YI;LIN HAN C |
发明人 |
YE PEIDE D.;XUAN YI;LIN HAN C. |
分类号 |
H01L21/335;H01L29/78 |
主分类号 |
H01L21/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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