发明名称 |
Phase changeable memory device and method of formation thereof |
摘要 |
In a phase changeable memory device and a method of formation thereof, the phase changeable memory device comprises: a lower electrode pattern on an interlayer insulating layer; an insulating pattern located on the lower electrode pattern; a phase changeable pattern penetrating the insulating pattern and the lower electrode pattern to contact the lower electrode pattern and the interlayer insulating layer; and an upper electrode on the phase changeable pattern.
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申请公布号 |
US7419881(B2) |
申请公布日期 |
2008.09.02 |
申请号 |
US20050252807 |
申请日期 |
2005.10.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO BYEONG-OK;JOO SUK-HO;RYOO KYUNG-CHANG;BYUN KYUNG-RAE |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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