| 摘要 |
A two-port dual-gate field-effect transistor for amplifier applications, wherein a self-bias circuit includes a number of passive elements, such as resistors, diodes and capacitors, is utilized to coupled the output of the amplifier with a second gate of the dual-gate device as a bias source, which transforms the conventional three-port cascade topology into a two-port dual-gate device so as to facilitate device testing, modeling, and packaging for discrete device application. The technology improves the RF performance in conventional two-port single-gate HEMT devices, with slight noise figure degradation.
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