发明名称 SEMICONDUCTOR DEVICE
摘要 A semiconductor device is provided to reduce a thickness thereof by overlapping partially a backside of a first island and a surface of a second island. A semiconductor device includes a stacked structure of a first semiconductor chip(17) and a second semiconductor chip(20). The first semiconductor chip is fixed to an upper surface of a first island(12). The second semiconductor chip is fixed to a lower surface of a second island(13). The first island and the second island are positioned between the first semiconductor chip and the second semiconductor chip. The first island and the second island are positioned apart from each other. The first island and the second island are overlapped on each other in plane. The thickness sum of the first and second islands is shorter than a gap between a lower surface of the first semiconductor chip and an upper surface of the second semiconductor chip.
申请公布号 KR20080079979(A) 申请公布日期 2008.09.02
申请号 KR20070094531 申请日期 2007.09.18
申请人 SANYO ELECTRIC CO., LTD. 发明人 INOTSUME HIDEYUKI;FUKUDA HIROKAZU
分类号 H01L21/60;H01L23/12;H01L23/48 主分类号 H01L21/60
代理机构 代理人
主权项
地址