| 摘要 |
A vertical light emitting diode and a method for manufacturing the same are provided to reduce light loss due to an ohmic electrode by reflecting a light on a metal reflection layer without transmitting the ohmic electrode. Compound semiconductor layers are located on a conductive substrate(81) and include an N-type semiconductor layer(55), an active layer(57), and a P-type semiconductor layer(59). A part of a lower portion of the N-type semiconductor layer, the active layer, and the P-type semiconductor layer are partially removed. A dielectric layer(60) has an opened region to expose a part of the P-type semiconductor layer. The dielectric layer covers the compound semiconductor layers. An ohmic electrode(71) is formed on the P-type semiconductor layer through the opened region of the dielectric layer. A metal reflection layer(73) is disposed among the ohmic electrode, the dielectric layer, and the conductive substrate.
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