发明名称 |
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD |
摘要 |
A substrate processing apparatus is provided with a process chamber for processing a substrate; a heating apparatus for optically heating the substrate stored in the process chamber from the outer circumference side of the substrate; a cooling apparatus for cooling the outer circumference side of the substrate by flowing a fluid in the vicinity of the outer circumference of the substrate to be optically heated by the heating apparatus; a temperature detecting section for detecting the temperature in the processing chamber; and a heating control section for controlling the heating apparatus and the cooling apparatus to have a temperature difference between the center portion and the end portion of the substrate by maintaining the temperature at the center portion of the substrate at a prescribed temperature, based on the temperature detected by the temperature detecting section.
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申请公布号 |
KR20080080142(A) |
申请公布日期 |
2008.09.02 |
申请号 |
KR20087015396 |
申请日期 |
2007.02.21 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
UENO MASAAKI;SHIMADA MASAKAZU;HANASHIMA TAKEO;MORIKAWA HARUO;HAYASHIDA AKIRA |
分类号 |
H01L21/324;H01L21/02 |
主分类号 |
H01L21/324 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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