发明名称 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
摘要 A substrate processing apparatus is provided with a process chamber for processing a substrate; a heating apparatus for optically heating the substrate stored in the process chamber from the outer circumference side of the substrate; a cooling apparatus for cooling the outer circumference side of the substrate by flowing a fluid in the vicinity of the outer circumference of the substrate to be optically heated by the heating apparatus; a temperature detecting section for detecting the temperature in the processing chamber; and a heating control section for controlling the heating apparatus and the cooling apparatus to have a temperature difference between the center portion and the end portion of the substrate by maintaining the temperature at the center portion of the substrate at a prescribed temperature, based on the temperature detected by the temperature detecting section.
申请公布号 KR20080080142(A) 申请公布日期 2008.09.02
申请号 KR20087015396 申请日期 2007.02.21
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 UENO MASAAKI;SHIMADA MASAKAZU;HANASHIMA TAKEO;MORIKAWA HARUO;HAYASHIDA AKIRA
分类号 H01L21/324;H01L21/02 主分类号 H01L21/324
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