| 摘要 |
The invention relates to a method of bonding together two wafers made of materials selected from semiconductor materials by providing two wafers each having a surface that is suitable for molecular bonding; and conducting plasma activation of at least one surface of one of the wafers by directing plasma species onto the surface(s) being activated while controlling activation parameters of the plasma to provide kinetic energy to the species sufficient to create a disturbed region of controlled thickness beneath the surface(s) being activated. Advantageously, the surface of each wafer is activated for optimum results while the controlling of the activation parameters also serves to control the maximum depth of the disturbed region in the surfaces. During plasma activation, the activation parameters are controlled to modify the kinetic energy of the species contained in the plasma in order to create one or a plurality of disturbed regions of controlled thickness in the thickness of a surface region of the wafer(s) whose surface is being activated.
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