发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
A first semiconductor pillar layer of a first conductivity type is formed on a main surface of a semiconductor substrate of the first conductivity type. A second semiconductor pillar layer of a second conductivity type is formed adjacent to the first semiconductor pillar layer. A third semiconductor pillar layer of the first conductivity type is formed adjacent to the second semiconductor pillar layer. A semiconductor base layer of the second conductivity type is formed on the main surface of the second semiconductor pillar layer. An insulated-gate type semiconductor element is formed in the semiconductor base layer. The carrier concentration on the side of a main surface of each of said first through third semiconductor pillar layers is higher than a carrier concentration on the opposite side of said main surface in each of said first through third semiconductor pillar layers.
|
申请公布号 |
US7420245(B2) |
申请公布日期 |
2008.09.02 |
申请号 |
US20050194609 |
申请日期 |
2005.08.02 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
YAMASHITA ATSUKO;MATSUDA TETSUO;OKUMURA HIDEKI;TSUCHITANI MASANOBU |
分类号 |
H01L29/94 |
主分类号 |
H01L29/94 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|