发明名称 Semiconductor light-emitting device, lighting module, lighting device and method for manufacturing semiconductor light-emitting device
摘要 A semiconductor light-emitting device includes: a semiconductor multilayer film, a substrate supporting the semiconductor multilayer film; and a phosphor layer formed on the substrate so as to cover the semiconductor multilayer film. The phosphor layer has an outer edge of a cross section taken in a direction parallel to the principal surface of the substrate having a substantially circular shape or a substantially regular polygonal shape having five or more sides. An outer edge of the principal surface of the substrate is formed in a substantially circular shape or a substantially regular polygonal shape having five or more sides. With this configuration, light obtained therefrom has less non-uniformity in color and a high luminous flux can be realized.
申请公布号 US7420221(B2) 申请公布日期 2008.09.02
申请号 US20050570114 申请日期 2005.09.01
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 NAGAI HIDEO
分类号 H01L33/32;H01L33/36;H01L33/50;H01L33/56;H01L33/58;H01L33/60;H01L33/62 主分类号 H01L33/32
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