| 摘要 |
This patent specification describes methods for fabricating semiconductor device having a plurality of well structures including a triple-well structure. One example of a method for fabricating semiconductor device includes forming a thermally stable film on a first conductivity type substrate, forming a first resist film having an opening at a position corresponding to a first well forming area on the thermally stable film, removing the thermally stable film selectively by masking with the first resist film so as to make a neutering mask, implanting a second conductivity type impurity into the first well forming area by masking with the neutering mask and the first resist film, removing the first resist film, forming a second conductivity type well by diffusing and activating the second conductivity type impurity implanted into the first well forming area with a heating process, and implanting a first conductivity type impurity into a surface region of the first well forming area by masking with the neutering mask.
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