发明名称 |
COMPOUND SEMICONDUCTOR LIGHT-EMITTING DIODE AND METHOD FOR FABRICATION THEREOF |
摘要 |
A compound semiconductor light-emitting diode includes a light-emitting layer (133) formed of aluminum-gallium-indium phosphide, a light-emitting part (13) having component layers individually formed of a Group III-V compound semiconductor, a transparent supporting layer (14) bonded to one of the outermost surface layers (135) of the light-emitting part (13) and transparent to the light emitted from the light-emitting layer (133), and a bonding layer (141) formed between the supporting layer (14) and the one of the outermost surface layers (135) of the light-emitting part (13) containing oxygen atoms at a concentration of 1×1020 cm−3 or less. |
申请公布号 |
EP1900042(A1) |
申请公布日期 |
2008.03.19 |
申请号 |
EP20060768112 |
申请日期 |
2006.07.05 |
申请人 |
SHOWA DENKO KABUSHIKI KAISHA |
发明人 |
WATANABE, TAKASHI;TAKEUCHI, RYOUICHI |
分类号 |
H01L33/00;H01L33/30;H01L33/38 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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