SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A semiconductor integrated circuit device and a manufacturing method thereof are provided to supply a well bias voltage and a substrate bias voltage by using a dummy gate pattern instead of a wiring. A dummy pattern is extended in one direction on a semiconductor substrate(100). A junction region(220,320) is formed to connect electrically the semiconductor substrate with the dummy pattern. A voltage applying unit applies a bias voltage to the dummy pattern. A first conductive type well is formed in the semiconductor substrate. The junction region is electrically connected to the dummy pattern within the first conductive type well. The dummy pattern includes polysilicon. The dummy pattern further includes a metal layer.