SEMICONDUCTOR MEMORY DEVICE

摘要

A semiconductor memory device is provided to perform high speed operation of an internal boosting circuit by reducing a high voltage generation time by reducing the frequency of voltage pumping. An internal voltage generation circuit(41) generates an internal power supply voltage by receiving a first external power supply voltage. An internal boosting circuit(42) generates a voltage higher than the internal power supply voltage by using the first external power supply voltage and a second external power supply voltage higher than the first external power supply voltage. The internal boosting circuit comprises a control signal generator and a high voltage generator. The control signal generator generates a precharge control signal and a pumping control signal. The high voltage generator precharges a boosting node to a voltage level corresponding to the first external power supply voltage in response to the precharge control signal, and transmits a pumped high voltage to a high voltage generation port by pumping the boosting node with a high voltage corresponding to a voltage level obtained by adding the first and the second external power supply voltage.