| 摘要 |
A backside illuminated image sensor and a method for manufacturing the same are provided to improve the sensitivity characteristic of image sensors by sensing a signal of an align key to implement an exact alignment. A semiconductor substrate(100) has a pixel region(A) and a scribe line region(B). A back side of the semiconductor substrate is grinded. A photo diode(105) is arranged at a front side of the semiconductor substrate of the pixel region. An align key(103a) is arranged at a front side of the semiconductor substrate of the scribe line region. A trench is arranged on a rear surface of the semiconductor substrate of the scribe line region. The trench is arranged on a region greater than the align key region. Interlayer dielectrics(110,120) are arranged at the front side of the semiconductor substrate having the photo diode. Metal wires are arranged in the interlayer dielectric of the pixel region. A color filter is arranged at the back side of the semiconductor substrate of the pixel region. A micro lens is arranged on the color filter.
|
