A MANUFACTURING METHOD OF SEMICONDUCTOR DEVICES USING A SLOPED PHOTORESIST PATTERN

摘要

A method for manufacturing a semiconductor device using a sloped photoresist pattern is provided to dramatically reduce the nonuniformity of electrical characteristic by using a preliminary photoresist pattern. A first preliminary photoresist pattern(29) having a first opening(30a) is formed on a semiconductor substrate(21). A second preliminary photoresist pattern(31) having a second opening(30b) is formed on the first preliminary photoresist pattern. The second opening is overlapped with the first opening and has a width wider than that of the first opening. The first and second preliminary photoresist patterns are heat-treated to form a photoresist patter having a sloped sidewall. A third preliminary photoresist pattern(33) having a third opening(30c) is formed on the second preliminary photoresist pattern. The third opening is overlapped with the second opening and has a width wider than that of the second opening.