| 摘要 |
<p>A nonvolatile semiconductor memory and a method for manufacturing the same are provided to restrain the reduction of a gate and the change of a gate size by preventing an oxidizing agent from reaching to a polycrystalline silicon layer. A source-drain region(203) is formed on a surface unit of a silicon substrate(201) having a channel region(202). A tunnel oxide layer(204) is formed on the silicon substrate. A floating gate electrode(205), an interlayer dielectric(206), and a control gate electrode(207) formed with a polycrystalline silicon are sequentially laminated on the tunnel oxide layer along a second direction with a predetermined gap. A gap-filling isolation region(210) is formed along a first direction with a predetermined gap. A nitrogen-precipitated layer(208) is formed on an upper surface. A side and a lower surface of the floating gate electrode and on a lower surface and a side of the control gate electrode. Silicon oxide layers(209) are formed at sidewalls of the floating gate electrode, the interlayer dielectric, and the control gate electrode.</p> |
