| 摘要 |
A non-volatile memory device and a driving method thereof are provided to solve the generation of an error in read result of initial setting data related with operation environment setting by a defective column. A memory cell array(110) has a plurality of regions stored with setting information related with operation environment setting. An input/output buffer(140) stores temporarily or outputs data provided from the memory cell array. A data judgment part(150) receives plural setting information copied and stored by initial read operation performed when a voltage is applied to a memory device, and outputs initial setting data by comparing the plural setting information with one another. The memory cell array allocates the plurality of regions to one page unit, and the setting information is copied and stored in each region.
|
