| 摘要 |
A method for forming a metal line of a semiconductor device is provided to prevent dishing and scratch by forming an aluminum compound layer(TaAl3) on an interface of an Al layer and a Ti layer or on an upper portion of the Al layer. A dielectric(125) including a contact hole(130) and a trench(135) is formed on a semiconductor substrate. A first metal layer(140) is formed on the dielectric to gap-fill the contact hole and the trench. A second metal layer is formed on the first metal layer. Thermal treatment is performed to form a third metal layer by reacting the first and second metal layers with each other. A planarization process is performed so that the first and second metal layers remain only in the contact hole and the trench. After the first metal layer is formed, a planarization process is performed on the first metal layer so that the first metal layer remains on the dielectric. The planarization process is performed by using CMP.
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