| 摘要 |
A non-volatile memory device and a driving method thereof are provided to read initial setting data stably from a memory cell array regardless of a defective column generated at random. A memory cell array(110) is stored with initial setting data related with operation environment setting of a memory device. An input/output buffer(140) stores temporarily or outputs data provided from the memory cell array in response to a control signal. An indicator sensing part(150) performs sensing operation for data according to the initial read result of the memory cell array according as a voltage is applied to the memory device, and provides the control signal to the input/output buffer according to the sensing result, and controls the input/output buffer to provide the initial setting data to an internal circuit of the memory device. The initial setting data stored in the memory cell array includes main data having information about operation environment and an indicator corresponding to the main data to discriminate the main data.
|
