NONVOLATILE MEMOR DEVICE AND PROGRAM AND ERASE METHOD THEREOF

摘要

A nonvolatile memory device and a program and erase method thereof are provided to improve program speed and erase speed, by providing a verify voltage with different voltage levels according to position information of each word line. A memory cell array(110) has a plurality of word lines and a plurality of bit lines arranged in crossing with each other. A verify voltage generator(152) generates a verify voltage to be applied to a word line selected among the plurality of word lines during program or erase operation. A voltage controller(151) determines a voltage level of the verify voltage according to position information of the selected word line. The plurality of word lines are divided into a first word line group and a second word line group. The first word line group is a word line not adjacent to a string selection line and a ground selection line, and the second word line group is a word line adjacent to the string selection line and the ground selection line.