发明名称 PLASMA ION GENERATING APPARATUS FOR ION INJECTING EQUIPMENT AND PLASMA ION GENERATING METHOD THE SAME
摘要 A plasma ion generating apparatus for an ion injecting equipment and a plasma ion generating method for an ion injecting equipment using the same are provided to further extend the life time of a PFG(Plasma Flood Gun) by forming plasma indirectly, thereby preventing contamination of a PFG filament to the maximum. In a plasma ion generating apparatus(200) for an ion injecting equipment which injects impurity ions into a semiconductor substrate, the plasma ion generating apparatus comprises: an arc chamber(202) that is a space for generating plasma; a plasma flood gun(PFG) filament(204) formed in the arc chamber to emit hot electrons(214); a cathode(206) formed between the arc chamber and the PFG filament to spatially separate the arc chamber and the PFG filament, and emit the hot electrons generated from the PFG filament into the arc chamber such that plasma is formed within the arc chamber; a filament power supply(208) for supplying power to the PFG filament; a cathode power supply(210) for supplying power to the cathode; and an arc power supply(212) for supplying power to the arc chamber.
申请公布号 KR20080079372(A) 申请公布日期 2008.09.01
申请号 KR20070019387 申请日期 2007.02.27
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 MUN, KYUNG TAE;SIM, JAE MYUNG
分类号 C23C14/48 主分类号 C23C14/48
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