METHOD OF FORMING SEMICONDUCTOR DEVICE HAVING OFFSET SPACER AND RELATED DEVICE

摘要

A method of manufacturing a semiconductor device with an offset spacer and a related device are provided to form an offset spacer while preventing occurrence of a recess of a semiconductor substrate and to implement a semiconductor device with excellent electric characteristics. A method of manufacturing a semiconductor device includes the steps: forming a gate electrode(57) on a semiconductor substrate(51); forming a re-oxidation layer on a upper surface and sidewalls of the gate electrode using a thermal oxidation process; forming an etch stop layer on the entire surface of the semiconductor substrate having the gate electrode; forming first spacers on sidewalls of the gate electrode so that the etch stop layer is exposed on the semiconductor substrate of both sides of the gate electrode; forming LDD regions(73) on the semiconductor substrate using the gate electrode and the first spacers as ion injection mask; and forming second spacers(74) on the first spacers.