| 摘要 |
A method and an apparatus for forming a sputter film are provided to change a concentration of an additive metal in an alloy film by changing parameters, such as a high frequency power for forming plasma and a plasma input power supplied to a metal target. An apparatus for forming a sputter film supplies gas for generating plasma into a process chamber, supplies power to the gas, and deposits an alloy film on an object to be processed. The apparatus for forming the sputter film includes a memory portion(37) and a control portion(30). The memory portion relates various parameter values including a pressure and a power inside the process chamber to a first alloy film, relates other parameter values to a second alloy film, and stores the parameter values of the first and second alloy films in a database. Concentration values of additive metals in the first and second alloy films are different from each other. The control portion reads the parameter values corresponding to the first and second alloy films from the database, and outputs a control signal, such that sputter films are sequentially formed on the first and second alloy films based on parameter values. |
